IndiumV3, Russie, Analysis, bibRecord, 000264

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Identifieur interne : 000264 ( Russie/Analysis ); précédent : 000263; suivant : 000265

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Auteurs : RBID : Pascal:07-0182218

Descripteurs français

Pascal (Inist)
- Gallium nitrure, Indium nitrure, Semiconducteur III-V, Puits quantique, Nanomatériau, Méthode MOCVD, Croissance cristalline en phase vapeur, Puits quantique multiple, Microscopie force atomique, Photoluminescence, Diffraction RX, Mécanisme croissance, Morphologie surface, Densité dislocation, InGaN, In, GaN, 8107S, 6855J.

English descriptors

KwdEn :
- Atomic force microscopy, Crystal growth from vapors, Dislocation density, Gallium nitrides, Growth mechanism, III-V semiconductors, Indium nitrides, MOCVD, Multiple quantum well, Nanostructured materials, Photoluminescence, Quantum wells, Surface morphology, XRD.

Abstract

Various techniques for morphological evolution of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition have been evaluated. Atomic force microscopy, photoluminescence (PL) and X-ray diffraction measurements have been used for characterization. It is shown that inclusions, that are generated into the V-defects in the InGaN quantum wells (QW), can be removed by introducing a small amount of hydrogen during the growth of GaN barriers. This hydrogen treatment results in partial loss of indium from the QWs, but smooth surface morphology of the MQW structure and improved optical quality of InGaN wells are obtained. The density of the V-defects could be reduced by reducing the dislocation density of the underlying GaN buffer.

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Pascal:07-0182218

Le document en format XML

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<front><div type="abstract" xml:lang="en">Various techniques for morphological evolution of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition have been evaluated. Atomic force microscopy, photoluminescence (PL) and X-ray diffraction measurements have been used for characterization. It is shown that inclusions, that are generated into the V-defects in the InGaN quantum wells (QW), can be removed by introducing a small amount of hydrogen during the growth of GaN barriers. This hydrogen treatment results in partial loss of indium from the QWs, but smooth surface morphology of the MQW structure and improved optical quality of InGaN wells are obtained. The density of the V-defects could be reduced by reducing the dislocation density of the underlying GaN buffer.</div>
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Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri